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PHP79NQ08LT
N-channel TrenchMOS logic level FET
Rev. 03 -- 26 April 2010 Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Low conduction losses due to low on-state resistance Suitable for logic level gate drive sources
1.3 Applications
DC-to-DC convertors General purpose power switching Motors, lamps and solenoids Uninterruptible power supplies
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj 25 C; Tj 175 C Tmb = 25 C; VGS = 10 V Tmb = 25 C; see Figure 2 Min Typ Max Unit 75 73 157 V A W
Static characteristics RDSon VGS = 10 V; ID = 25 A; Tj = 25 C; see Figure 9; see Figure 10 14 16 m
Dynamic characteristics QGD gate-drain charge VGS = 5 V; ID = 25 A; VDS = 60 V; Tj = 25 C; see Figure 11; see Figure 12 14 nC
NXP Semiconductors
PHP79NQ08LT
N-channel TrenchMOS logic level FET
2. Pinning information
Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain
mb
D
Simplified outline
Graphic symbol
G
mbb076
S
123
SOT78 (TO-220AB)
3. Ordering information
Table 3. Ordering information Package Name PHP79NQ08LT TO-220AB Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB Version SOT78 Type number
4. Limiting values
Table 4. Symbol VDS VDGR VGS ID Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current VGS = 10 V; Tmb = 25 C VGS = 5 V; Tmb = 100 C; see Figure 1 VGS = 10 V; Tmb = 100 C VGS = 5 V; Tmb = 25 C; see Figure 1; see Figure 3 IDM Ptot Tstg Tj IS peak drain current total power dissipation storage temperature junction temperature source current Tmb = 25 C tp 10 s; pulsed; Tmb = 25 C; see Figure 3 Tmb = 25 C; see Figure 2 Conditions Tj 25 C; Tj 175 C Tj 175 C; Tj 25 C; RGS = 20 k Min -15 -55 -55 Typ Max 75 75 15 73 47 51 67 240 157 175 175 67 Unit V V V A A A A A W C C A
In accordance with the Absolute Maximum Rating System (IEC 60134).
Source-drain diode
PHP79NQ08LT
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(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 -- 26 April 2010
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NXP Semiconductors
PHP79NQ08LT
N-channel TrenchMOS logic level FET
Table 4. Symbol ISM EDS(AL)S
Limiting values ...continued Parameter peak source current non-repetitive drain-source avalanche energy Conditions tp 10 s; pulsed; Tmb = 25 C VGS = 10 V; Tj(init) = 25 C; ID = 35 A; Vsup 75 V; RGS = 50 ; tp = 0.07 ms; unclamped Min Typ Max 270 120 Unit A mJ
In accordance with the Absolute Maximum Rating System (IEC 60134).
Avalanche ruggedness
120 Ider (%) 80
03aa24
120 Pder (%) 80
03aa16
40
40
0 0 50 100 150 Tmb (C) 200
0 0 50 100 150 Tmb (C) 200
Fig 1.
Normalized continuous drain current as a function of mounting base temperature
Fig 2.
Normalized total power dissipation as a function of mounting base temperature
003aaa910
103 ID (A) 102
Limit RDSon = VDS/ID
tp = 10 s
1ms DC
10
10 ms 100 ms 1s
1 1 10
102 VDS (V)
103
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PHP79NQ08LT
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(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 -- 26 April 2010
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NXP Semiconductors
PHP79NQ08LT
N-channel TrenchMOS logic level FET
5. Thermal characteristics
Table 5. Symbol Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to mounting base thermal resistance from junction to ambient Conditions see Figure 4 Min Typ Max 0.95 Unit K/W
Rth(j-a)
vertical in still air
-
60
-
K/W
1 = 0.5 Zth(j-mb) (K/W) 0.2 0.1 0.05 0.02 single pulse
P
003aaa911
10-1
=
tp T
tp
t T
10-2 10-4
10-3
10-2
10-1 tp (s)
1
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
PHP79NQ08LT
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 -- 26 April 2010
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NXP Semiconductors
PHP79NQ08LT
N-channel TrenchMOS logic level FET
6. Characteristics
Table 6. Symbol V(BR)DSS VGS(th) Characteristics Parameter drain-source breakdown voltage gate-source threshold voltage Conditions ID = 0.25 mA; VGS = 0 V; Tj = -55 C ID = 0.25 mA; VGS = 0 V; Tj = 25 C ID = 1 mA; VDS = VGS; Tj = 175 C; see Figure 7; see Figure 8 ID = 1 mA; VDS = VGS; Tj = -55 C; see Figure 7; see Figure 8 ID = 1 mA; VDS = VGS; Tj = 25 C; see Figure 7; see Figure 8 IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance VDS = 75 V; VGS = 0 V; Tj = 25 C VDS = 75 V; VGS = 0 V; Tj = 175 C VGS = 15 V; VDS = 0 V; Tj = 25 C VGS = -15 V; VDS = 0 V; Tj = 25 C VGS = 4.5 V; ID = 25 A; Tj = 25 C; see Figure 9; see Figure 10 VGS = 5 V; ID = 25 A; Tj = 175 C; see Figure 9; see Figure 10 VGS = 10 V; ID = 25 A; Tj = 25 C; see Figure 9; see Figure 10 VGS = 5 V; ID = 25 A; Tj = 25 C; see Figure 9; see Figure 10 Dynamic characteristics QG(tot) QGS QGD Ciss Coss Crss td(on) tr td(off) tf VSD trr Qr total gate charge gate-source charge gate-drain charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage reverse recovery time recovered charge IS = 25 A; VGS = 0 V; Tj = 25 C; see Figure 14 IS = 20 A; dIS/dt = -100 A/s; VGS = -10 V; VDS = 30 V; Tj = 25 C VDS = 30 V; RL = 1.2 ; VGS = 5 V; RG(ext) = 10 ; Tj = 25 C VDS = 25 V; VGS = 0 V; f = 1 MHz; Tj = 25 C; see Figure 13 ID = 25 A; VDS = 60 V; VGS = 5 V; Tj = 25 C; see Figure 11; see Figure 12 30 6 14 3026 301 140 30 102 101 57 0.85 90 110 1.2 nC nC nC pF pF pF ns ns ns ns V ns nC Min 70 75 0.5 1.1 Typ 1.5 0.02 2 2 15.5 14 15 Max 2.3 2 1 500 100 100 18 34 16 16.4 Unit V V V V V A A nA nA m m m m
Static characteristics
Source-drain diode
PHP79NQ08LT
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 -- 26 April 2010
5 of 13
NXP Semiconductors
PHP79NQ08LT
N-channel TrenchMOS logic level FET
80 ID (A) 60 VGS (V) = 10 5 4.5 4
003aaa974
3.5 3.2 ID (A)
80
003aaa976
60 3
40
2.8
40
Tj = 175 C 20 2.5 2.2 2 0 0.5 1 1.5 VDS (V) 2 20
25 C
0
0 0 1 2 3 VGS (V) 4
Fig 5.
Output characteristics: drain current as a function of drain-source voltage; typical values
5
03aa32
Fig 6.
Transfer characteristics: drain current as a function of gate-source voltage: typical values
03aa35
10-1 ID (A)
VGS(th) (V) 4 max
10-2
min
typ
max
3
typ
10-3
2
min
10-4
1
10-5
0 -60
10-6 0 60 120 Tj (C) 180 0 2 4 VGS (V) 6
Fig 7.
Gate-source threshold voltage as a function of junction temperature
Fig 8.
Sub-threshold drain current as a function of gate-source voltage
PHP79NQ08LT
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 -- 26 April 2010
6 of 13
NXP Semiconductors
PHP79NQ08LT
N-channel TrenchMOS logic level FET
40 RDSon (m) 30
003aaa975
2.5
2.8
3
a
2.4
003aaa918
3.2
1.6
3.5 20
10
VGS (V) = 4 4.5 5 10
0.8
0 0 20 40 60 ID (A) 80
0 -60
0
60
120 Tj (C)
180
Fig 9.
Drain-source on-state resistance as a function of drain current; typical values
5
003aaa915
Fig 10. Normalized drain-source on-state resistance factor as a function of junction temperature
VGS (V) 4
VDS VDD = 14 V VDD = 60 V ID VGS(pl) 3 VGS(th) 2 VGS QGS1 1 QGS2 QGD QG(tot)
003aaa508
QGS
0 0 10 20 30 QG (nC) 40
Fig 11. Gate-source voltage as a function of gate charge; typical values
Fig 12. Gate charge waveform definitions
PHP79NQ08LT
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 -- 26 April 2010
7 of 13
NXP Semiconductors
PHP79NQ08LT
N-channel TrenchMOS logic level FET
5000 C (pF) 3750 Coss 2500 Crss 1250 Ciss
003aaa917
80 VGS = 0 V Is (A) 60
003aaa916
40
20 175 C Tj = 25 C
0 10-2
10-1
1
10 VDS (V)
102
0 0 0.3 0.6 0.9 VSD (V) 1.2
Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
Fig 14. Source current as a function of source-drain voltage; typical values
PHP79NQ08LT
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 -- 26 April 2010
8 of 13
NXP Semiconductors
PHP79NQ08LT
N-channel TrenchMOS logic level FET
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78
E p
A A1 q
D1
mounting base
D
L1(1)
L2(1) Q
L
b1(2) (3x) b2(2) (2x)
1 2 3
b(3x) e e
c
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.7 4.1 A1 1.40 1.25 b 0.9 0.6 b1(2) 1.6 1.0 b2(2) 1.3 1.0 c 0.7 0.4 D 16.0 15.2 D1 6.6 5.9 E 10.3 9.7 e 2.54 L 15.0 12.8 L1(1) 3.30 2.79 L2(1) max. 3.0 p 3.8 3.5 q 3.0 2.7 Q 2.6 2.2
Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC 3-lead TO-220AB JEITA SC-46 EUROPEAN PROJECTION ISSUE DATE 08-04-23 08-06-13
Fig 15. Package outline SOT78 (TO-220AB)
PHP79NQ08LT
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 -- 26 April 2010
9 of 13
NXP Semiconductors
PHP79NQ08LT
N-channel TrenchMOS logic level FET
8. Revision history
Table 7. Revision history Release date 20100426 Data sheet status Product data sheet Change notice Supersedes PHP79NQ08LT_2 Document ID PHP79NQ08LT _3 Modifications:
* *
The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Product data sheet PHP79NQ08LT_1
PHP79NQ08LT_2
20100419
PHP79NQ08LT
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 -- 26 April 2010
10 of 13
NXP Semiconductors
PHP79NQ08LT
N-channel TrenchMOS logic level FET
9. Legal information
9.1 Data sheet status
Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
9.2
Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification -- The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.
Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer's third party customer(s) (hereinafter both referred to as "Application"). It is customer's sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer's general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
(c) NXP B.V. 2010. All rights reserved.
9.3
Disclaimers
Limited warranty and liability -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors' aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.
PHP79NQ08LT
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 03 -- 26 April 2010
11 of 13
NXP Semiconductors
PHP79NQ08LT
N-channel TrenchMOS logic level FET
Non-automotive qualified products -- Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors' warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors' specifications such use shall be solely at customer's own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors' standard warranty and NXP Semiconductors' product specifications.
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, IC-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE -- are trademarks of NXP B.V. HD Radio and HD Radio logo -- are trademarks of iBiquity Digital Corporation.
10. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
PHP79NQ08LT
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 -- 26 April 2010
12 of 13
NXP Semiconductors
PHP79NQ08LT
N-channel TrenchMOS logic level FET
11. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .10 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Contact information. . . . . . . . . . . . . . . . . . . . . .12
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 26 April 2010 Document identifier: PHP79NQ08LT

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